ROHM Develops Breakthrough Schottky Barrier Diode Combining Low VF and IR for Advanced Image Sensor Protection

Executive Summary

• ROHM Semiconductor announced the development of a new Schottky barrier diode (RBE01VYM6AFH) that simultaneously achieves low forward voltage (VF < 300 mV) and low reverse leakage current (IR < 20 mA), addressing a long‑standing trade‑off in high‑resolution image sensor protection.
• The device is AEC‑Q101 qualified, packaged in a compact SOD‑323HE footprint, and targeted at ADAS cameras, industrial equipment, security systems, and other space‑constrained automotive/IoT applications.
• ROHM plans to expand the product line with even smaller packages to meet ongoing miniaturization trends.

Key Details

• Device name: RBE01VYM6AFH (also listed as RBE01VYM6AFHTR for online sales).
• Key performance metrics:
• Forward voltage (VF) < 300 mV at IF = 7.5 mA, Ta = ‑40 °C.
• Reverse leakage current (IR) < 20 mA at VR = 3 V, Ta = 125 °C.
• Package: Flat‑lead SOD‑323HE (2.5 mm × 1.4 mm), enabling high density board layouts.
• Qualification: AEC‑Q101 qualified for automotive reliability standards.
• Target applications: ADAS cameras, smart intercoms, security cameras, home IoT devices, and other image‑sensor‑based systems vulnerable to photovoltaic voltage when powered off.
• Availability: Listed with online distributors DigiKey, Mouser, and Farnell; additional distributors will be added as they become available.
• Future roadmap: ROHM intends to develop smaller package variants to support continued miniaturization demands in automotive electronics and related markets.

Notable Quotes

• “By fundamentally redesigning the device structure, we have achieved a Schottky barrier diode that delivers both low VF and low IR—an unprecedented combination for protection applications.” – Heike Mueller, ROHM Semiconductor

Materiality Assessment: Non‑Material – Positive (product innovation with potential market impact but no immediate financial or operational material effect disclosed).