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ROHM's SiC MOSFET Adopted in BBU for AI Servers as HVDC Architectures Advance
ROHM Taps AI Server Power Surge as SiC Adoption Accelerates in HVDC Architectures
Executive Summary
- ROHM Semiconductor announced that its 750 V SiC MOSFET (SCT4013DLL) has been selected for integration into Battery Backup Units (BBUs) for next-generation AI server power supplies.
- The adoption aligns with the data center industry's transition to high-voltage direct current (HVDC) architectures, driven by exponential power demands from generative AI and GPU expansion.
- The device is designed for ±400 V architectures and is viable for future 800 VDC systems where battery pack voltages reach ~560 V.
- Key technical specifications include a maximum junction temperature (Tj) of 175°C, low power loss, and rapid high-voltage/high-current control capability.
- ROHM will continue to expand its SiC, GaN, and silicon power device portfolio, leveraging its fully integrated manufacturing chain (wafer fabrication to packaging) under the EcoSiC™ brand.
- The announcement includes technical resources such as application notes, a white paper on 800 VDC architecture solutions, and design models for customer evaluation.
Material Impact
- Historical progression review (oldest to most recent):
- Late 2025: ROHM launched compact 100V MOSFETs for AI server hot-swap circuits, TOLL-package SiC MOSFETs, and BLDC motor gate drivers with TriC3™ active gate drive technology.
- Early 2026: Introduced high-power shunt resistors, Nano Cap™ LDO regulators, and automotive MOSFETs in new packages. Secured a TSMC GaN process license targeting 2027 production.
- Mid 2026: Released new SiC power modules (TRCDRIVE, HSDIP20, DOT-247) with reference designs, followed by 5th Generation SiC MOSFETs offering ~30% lower on-resistance at high temperatures. Launched ESD diodes for >10Gbps interfaces and a PLECS simulator for rapid circuit verification.
- Most recent (June 2026): SiC MOSFET adoption for AI server BBUs.
- The company has executed a highly disciplined, sequential product rollout targeting high-growth power semiconductor segments. Each announcement builds on the previous, demonstrating clear roadmap execution from discrete components to integrated modules and simulation tools.
- The June 3, 2026 news represents a validation of ROHM's SiC technology in the AI server power infrastructure space. However, it lacks disclosed contract value, volume commitments, or revenue impact. The market has already priced in AI-driven power demand, and this announcement is a logical extension of their existing SiC and HVDC narrative.
- No unexpected or market-moving financial data is presented. The news is consistent with prior projections and does not alter the fundamental risk/reward profile. It is an incremental design win rather than a structural shift.
6963 · Price
Company Overview
- ROHM Semiconductor is a leading Japanese manufacturer of power semiconductors, analog ICs, and sensors. The company operates a vertically integrated manufacturing model, controlling the entire production chain from silicon carbide (SiC) and gallium nitride (GaN) wafer fabrication to packaging and testing.
- Flagship projects include the EcoSiC™ and EcoGaN™ product lines, which target electric vehicles, renewable energy systems, industrial power supplies, and increasingly, AI server power infrastructure. The company's strategy emphasizes high-efficiency power conversion, miniaturization, and thermal management solutions.
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Jun 17, 2026 · 16:00